MJE3055T STMicroelectronics Transistor NPN 60V 10A TO-220

STMicroelectronics MJE3055T Transistor GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 Tube

Description

STMicroelectronics MJE3055T Transistor BIPOLAR NPN, 60V TO-220, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:2MHz, Power Dissipation Pd:75W, DC Collector Current:10A, DC Current Gain hFE:70, No. of Pins:3, RoHS

Specifications

Manufacturer: STMicroelectronics
Product Category: Bipolar Transistors – BJT
RoHS: RoHS Compliant
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 70 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.1 V
Maximum DC Collector Current: 10 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Series: 500V Transistors
Brand: STMicroelectronics
Continuous Collector Current: 10 A
DC Collector/Base Gain hfe Min: 20
DC Current Gain hFE Max: 70
Minimum Operating Temperature: – 55 C
Packaging: Tube
Pd – Power Dissipation: 75 W

Product Description

The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.

Features
   
  • DC Current Gain Specified to 10 Amperes
  • High Current Gain – Bandwidth Product –
    fT = 2.0 MHz (Min) @ IC
    fT = 500 mAdc
 

Manufacturer Part Number: MJE3055T.
Manufacturer: STMicroelectronics

Products & Services

Product Enquiry