Description
MMBT2222A Diotec Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 350 mW, SOT-23, Surface Mount
Specifications
Product Category: Bipolar Transistors – BJT
RoHS
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 75 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 1 A
Pd – Power Dissipation: 350 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT2222A
Packaging: Cut Tape
Packaging: Reel
DC Current Gain hFE Max: 300
Height: 0.93 mm
Length: 2.92 mm
Technology: Si
Width: 1.3 mm
Continuous Collector Current: 1 A
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: MMBT2222A_NL
Unit Weight: 0.000282 oz
Lifecycle: Obsolete
Bipolar (BJT) Single Transistor, SMALL SIGNAL TRANSISTOR NPN 40V, 1A, SOT 23, ROHS Switching, NPN, 40 V, 300 MHz, 250 mW, 600 mA, 100 , RoHS, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:40V, Transition Frequency ft:300MHz, Power Dissipation Pd:350mW, DC Collector Current:1A, DC Current Gain hFE:300hFE, No. of Pins:3Pin
The MMBT2222A from Diotec is a surface mount, NPN general purpose amplifier in SOT-23 package. This device is suitable for medium power amplification and switching applications.
Collector to emitter voltage (Vce) of 40V
Collector to emitter saturation voltage of 1V at 500mA collector current
Power dissipation of 350mW
DC collector current of 1A
DC current gain of 35 at Ic=10mA
Operating junction temperature range from -55°C to 150°C
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Manufacturer:Diotec
Datasheet:Diotec/1924731.pdf
