Description
MMUN2113LT1G ON Semiconductor Bipolar Transistors – Pre-Biased 100mA 50V BRT PNP SOT-23, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:50V, Power Dissipation Pd:246mW, DC Collector Current:100mA, DC Current Gain hFE:250hFE, No. of Pins:3Pins , RoHS
Specifications
Product Category: Bipolar Transistors – Pre-Biased
Manufacturer: ON Semiconductor
RoHS: RoHS Compliant
Configuration: Single
Transistor Polarity: PNP
Typical Input Resistor: 10 kOhms
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
DC Collector/Base Gain hfe Min: 160
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 0.1 A
Peak DC Collector Current: 100 mA
Pd – Power Dissipation: 246 mW
Maximum Operating Temperature: + 150 C
Series: MMUN2115L
Packaging: Cut Tape
Packaging: Reel
Brand: ON Semiconductor
DC Current Gain hFE Max: 160
Height: 0.94 mm
Length: 2.9 mm
Minimum Operating Temperature: – 55 C
Factory Pack Quantity: 3000
Width: 1.3 mm
Unit Weight: 0.000282 oz
Manufacturer Part Number: MMUN2113LT1G
Manufacturer: ON Semiconductor
