Description
Motorola BF393 High Voltage NPN Transistor 500mA 300V 0.625W TO-92 Through Hole
Features
High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) – BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available
Motorola – Mot BF393 Transistor High Voltage Transistor NPN Silicon
|
Rating |
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
300
Vdc
Collector–Base Voltage
VCBO
300
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C
PD
625 5.0
mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 12
Watts mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°
C
|
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
||||
|
Characteristic |
Symbol |
Min |
Max |
Unit |
|
ON CHARACTERISTICS |
||||
|
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) |
hFE |
25 40 |
— — |
— |
|
Collector–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) |
VCE(sat) |
— |
2.0 |
Vdc |
|
Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) |
VBE(sat) |
— |
2.0 |
Vdc |
Manufacturer Part Number: BF393
Motorola
