Description
MOTOROLA – MTP10N40E Transistor MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
MTP10N40E – TMOS E-FET™ High Energy Power FET TO-220AB
N-Channel Enhancement-Mode Silicon Gate
This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Capability Specified at Elevated Temperature
- Low Stored Gate Charge for Efficient Switching
- Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor – Absorbs High Energy in the Avalanche Mode
- Source-to-Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
- TO-220AB Package
Specifications
- 10 Amps
- 400 Volts
- RDX(on) = 0.55?
Manufacturer:Motorola
Datasheet:Motorola/2203661.pdf
