Description
Agilent Technologies MSA-2543 Low Current Amplifier
Avago Technologies’ MSA-2543 is a low current silicon gain block MMIC amplifier housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.
SPECIFICATIONS
Part #: MSA-2543-TR1
Part Category: RF/Microwave Devices
Description: 100MHz – 6000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Package Description PLASTIC, SOT-343, SC-70, 4 PIN
Status Discontinued
RF/Microwave Device Type WIDE BAND LOW POWER
Characteristic Impedance 50 ohm
Construction COMPONENT
Gain 13 dB
Input Power-Max (CW) 13 dBm
JESD-609 Code e0
Number of Functions 1
Operating Frequency-Min 100 MHz
Agilent MSA-2543 Cascadable Silicon Bipolar Gain Block MMIC Amplifier
Applications Cellular/PCS/WLL basestations Wireless data/ WLAN Fiber-optic systems ISM Description Agilent Technologies’ is a low current silicon gain block MMIC amplifier housed SC-70 (SOT-343) surface mount plastic package. Providing a nominal 13.8 dB gain to 0 dBm Pout, this device is ideal for small-signal gain stages or IF amplification. The Darlington feedback structure provides inherent broad bandwidth performance. The 25 GHz ft fabrication process results in a device with low current draw and useful operation to past 3 GHz. Typical Biasing Configuration
Features Small signal gain amplifier Low current draw Wide bandwidth 50 Ohms input & output Low cost surface mount small plastic package SOT-343 (4 lead SC-70) Tape-and-reel packaging option available
Pin Connections and Package Marking Specifications 2 GHz; 12 mA (typ.) 13.8 dB associated gain
Note: Top View. Package marking provides orientation and identification. `x’ is a character to identify date code.
Device Current Total Power Dissipation [2] RF Input Power Junction Temperature Storage Temperature Thermal Resistance [3]
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 25°C. Derate 7.4 mW/°C for 131°C. 3. Thermal resistance measured using 150°C Liquid Crystal Measurement method.
Electrical Specifications = 12 mA, 50, RF parameters measured in a test circuit for a typical device Symbol
Device Voltage Power Gain (|S21| ) Gain Flatness 3 dB Bandwidth Input Voltage Standing Wave Ratio Output Voltage Standing Wave Ratio 50 Noise Figure Output Power 1 dB Gain Compression Output Third Order Intercept Point Device Voltage Temperature Coefficient
Manufacturer:Avago Technologies
Datasheet:msa-2543-tr1.pdf
