Description
MT29F16G08ABABAWP-IT:B Micron FLASH – NAND Memory IC 16Gb (2G x 8) Parallel 48-TSOP
NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F4G08AAA is a 4Gb NAND Flash memory device. The MT29F8G08BAA is a two-die stack that operates as a single 8Gb device. The MT29F8G08DAA is a two-die stack that operates as two independent 4Gb devices. The MT29F16G08FAA is a four-die stack that operates as two independent 8Gb devices, providing a total storage capacity of 16Gb in a single, space-saving package. Micron NAND Flash devices include standard NAND Flash features as well as new features designed to enhance system-level performance. Micron NAND Flash devices use a highly multiplexed 8-bit bus (I/O[7:0]) to transfer data, addresses, and instructions. The five command pins (CLE, ALE, CE#, RE#, WE#) implement the NAND Flash command bus interface protocol. Additional pins control hardware write protection (WP#) and monitor device status (R/B#). The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kbits each and 31 main blocks of 512 Kbits each. In the M58BW016DT and M58BW016FT the parameter blocks are located at the top of the address space whereas in the M58BW016DB and M58BW016FB, they are located at the bottom. This hardware interface creates a low-pin-count device with a standard pinout that is the same from one density to another, allowing future upgrades to higher densities without board redesign. The MT29F4G, MT29F8G, and MT29F16G devices contain two planes per die. Each plane consists of 2,048 blocks. Each block is subdivided into 64 programmable pages. Each page consists of 2,112 bytes. The pages are further divided into a 2,048-byte data storage region with a separate 64-byte area. The 64-byte area is typically used for error management functions. The contents of each page can be programmed in 220s (TYP), and an entire block can be erased in 1.5ms (TYP). On-chip control logic automates PROGRAM and ERASE operations to maximize cycle endurance. PROGRAM/ERASE endurance is specified at 100,000 cycles with appropriate error correction code (ECC) and error management.
Key Features
Single-level cell (SLC) technology
Organization
Page size x8: 2,112 bytes (2,048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Plane size: 2,048 blocks
Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks
READ performance
Random READ: 25s (MAX)
Sequential READ: 25ns (MIN)
WRITE performance
PROGRAM PAGE: 220s (TYP)
BLOCK ERASE: 1.5ms (TYP)
Data retention: 10 years
Endurance: 100,000 PROGRAM/ERASE cycles
First block (block address 00h) guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1
Industry-standard basic NAND Flash command set
Advanced command set:
PROGRAM PAGE CACHE MODE
PAGE READ CACHE MODE
One-time programmable (OTP) commands
Two-plane commands
Interleaved die operations
READ UNIQUE ID (contact factory)
READ ID2 (contact factory)
Operation status byte provides a software method of detecting:
Operation completion
Pass/fail condition
Write-protect status
Ready/busy# (R/B#) signal provides a hardware method of detecting operation completion
WP# signal: write protect entire device
RESET required after power-up
INTERNAL DATA MOVE operations supported within the plane from which data is read
Technical Attributes
Page Size 4 KB
Program Current 50 mA
Address Bus Width 1 Bit
Operating Temperature -40 to 85C
Minimum Operating Supply Voltage 2.7 V
Erase Suspend/Resume Modes Support No
Maximum Operating Current 50 mA
Density 16 Gb
Maximum Programming Time 0.5/Page ms
Number of Bits per Word 8 Bit
Supplier Package TSOP
Support of Page Mode Yes
Simultaneous Read/Write Support No
Product Dimensions mm
Max Processing Temp 260
Pin Count 48
Typical Operating Supply Voltage 3.3 V
Screening Level Industrial
ECC Support Yes
Number of Words 2 Gwords
Command Compatible No
Boot Block No
Cell Type SLC NAND
Block Organization Symmetrical
Architecture Sectored
Maximum Erase Time 0.0035/Block s
Maximum Operating Supply Voltage 3.6 V
Mounting Surface Mount
Interface Type Parallel
Timing Type Asynchronous
Sector Size 512 x 4096 KB
Lead Finish Matte Tin
Manufacturer Part Number: MT29F16G08ABABAWP-IT
Manufacturer: Micron
