Description
NES JX2N3635 HIGH VOLTAGE POWER MOSFETS
Specifications
Product Category: Bipolar Transistors – BJT
RoHS: In Transition
Mounting Style: Through Hole
Package / Case: TO-39
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 140 V
Collector- Base Voltage VCBO: 140 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1 A
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 150 C
Series: 2N3635
Brand: Central Semiconductor
DC Collector/Base Gain hfe Min: 50
Minimum Operating Temperature: – 65 C
Packaging: Bulk
Pd – Power Dissipation: 1000 mW
Part # Aliases: BK
Manufacturer Part Number: JX2N3635
Manufacturer: Electronic Components
