Description
MPSA63 Natinal Semiconductor NSC MPSA63 Bipolar (BJT) Transistor PNP – Darlington 20V 500mA 125MHz 625mW Through Hole TO-92
Product Attributes
Categories Discrete Semiconductor Products
Transistors – Bipolar (BJT) – Single
Transistor Type PNP – Darlington
Current – Collector (Ic) (Max) 500mA
Voltage – Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA
Current – Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V
Power – Max 625mW
Frequency – Transition 125MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Manufacturer:National Semiconductor
Datasheet:MPSA63_PNP_Dar_Transistor.pdf
