Description
NT5DS64M8DS-5TI NANYA DRAM, 512M, 64Mbx8, 200MHz, 2.5V, 0.7ns, CMOS TSOP2-66 RoHS
Part #: NT5DS64M8DS-5TI
Part Category: Memory ICs
Manufacturer: Nanya Technology Corporation
Description: DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66
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SPECIFICATIONS
Mfr Package Description 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66
REACH Compliant Yes
EU RoHS Compliant Yes
Pins 60
Logic Family CMOS
Supply Voltage 2.6
Access Time 0.6500 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Sub Category DRAMs
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 200.0 MHz
Interleaved Burst Length 2,4,8
I/O Type COMMON
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory. It is internally configured as a quad-bank DRAM. The 512Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.
Cross Reference:
Micron MT46V64M8P-xB
Samsung K4H510838M-TIx (EOL)
ISSI IS43R86400D-xTLI
Hynix HY5DU12822CTP-xI (EOL)
Nanya NT5DS64M8DS-5TI
Alliance Memory AS4C64M8D1-5TIN
Manufacturer:Electronic Components
Datasheet:NANTS00928-1.pdf
