Description
RN2907,LF(CT Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) 50V 100mA 200MHz 200mW Surface Mount 6-Pin SC-88 RoHS
Bipolar Transistors – Pre-Biased PNP x 2 BRT, Q1BSR=10kOhm, Q1BER=47kOhm, Q2BSR=10kOhm, Q2BER=47kOhm, VCEO=-50V, IC=-0.1A
Specifications
Manufacturer: Toshiba
Product Category: Bipolar Transistors – Pre-Biased
Configuration: Dual
Transistor Polarity: PNP
Mounting Style: SMD/SMT
Package / Case: US-6
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: – 50 V
Pd – Power Dissipation: 200 mW
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: RN2907
Packaging: Cut Tape
Packaging: Reel
Collector- Base Voltage VCBO: – 50 V
Emitter- Base Voltage VEBO: – 6 V
Brand: Toshiba
Maximum DC Collector Current: – 100 mA
Product Type: BJTs – Bipolar Transistors – Pre-Biased
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 0.000240 oz
Manufacturer:Electronic Components
Datasheet:Toshiba/RN2907.pdf
