Description
S9013 LGE Transistor GP BJT NPN 25V 0.5A 3-Pin TO-92 RoHS
If your circuit’s specifications require a device that can handle high levels of voltage, NPN S9013 general purpose bipolar junction transistor is for you. This bipolar junction transistor’s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55C and a maximum of 150C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
Manufacturer Part Number: S9013
Manufacturer: Electronic Components
