Description
SCT3160KLGC11 Rohm N-Channel SiC Power Mosfet 1200 V 17 A 208 mOhm Through Hole TO-247N RoHS
Specifications
Manufacturer: ROHM Semiconductor
Product Category: MOSFET
Technology: SiC
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 1.2 kV
Id – Continuous Drain Current: 17 A
Rds On – Drain-Source Resistance: 160 mOhms
Vgs – Gate-Source Voltage: – 4 V, + 22 V
Vgs th – Gate-Source Threshold Voltage: 2.7 V
Qg – Gate Charge: 42 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 103 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Series: SCT3x
Transistor Type: 1 N-Channel
Brand: ROHM Semiconductor
Forward Transconductance – Min: 2.5 S
Fall Time: 25 ns
Product Type: MOSFET
Rise Time: 18 ns
Factory Pack Quantity: 450
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 14 ns
Part # Aliases: SCT3160KL
Unit Weight: 0.211644 oz
Manufacturer: Rohm Semiconductor
MFG Part #: SCT3160KLGC11
