Description
Vishay Siliconix SI2308BDS-T1-E3 MOSFET, N CH, 60V, 0.13OHM, 2.3A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.13ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power , RoHS
^Manufacturer: Vishay
^Product Category: MOSFET
^RoHS: RoHS Compliant Details
^Brand: Vishay Semiconductors
^Id – Continuous Drain Current: 1.9 A
^Vds – Drain-Source Breakdown Voltage: 60 V
^Rds On – Drain-Source Resistance: 156 mOhms
^Transistor Polarity: N-Channel
^Vgs – Gate-Source Breakdown Voltage: 20 V
^Maximum Operating Temperature: + 150 C
^Pd – Power Dissipation: 1.09 W
^Mounting Style: SMD/SMT
^Package / Case: SOT-23-3
^Packaging: Reel
^Channel Mode: Enhancement
^Configuration: Single
^Fall Time: 16 ns
^Minimum Operating Temperature: – 55 C
^Rise Time: 16 ns
^Factory Pack Quantity: 3000
^Typical Turn-Off Delay Time: 11 ns
^Typical Turn-On Delay Time: 15 ns
^Part # Aliases: SI2308BDS-E3
Manufacturer Part Number: SI2308BDS-T1-E3
Manufacturer: Vishay
