Description
SI2314EDS-T1 Vishay Siliconix N CHANNEL MOSFET, 20V, 4.9A, TO-236, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):33mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:950mV , RoHS
| FET Type | MOSFET N-Channel, Metal Oxide |
|---|---|
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current – Continuous Drain (Id) @ 25°C | 3.77A (Ta) |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | – |
| Power – Max | 750mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
Manufacturer Part Number: SI2314EDS-T1
Manufacturer: Vishay
