Description
SI2325DS-T1-BE3 Vishay / Siliconix MOSFET Power MOSFET, P Channel, 150 V, 690 mA, 1.3 ohm, Surface Mount TO-236, RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 150 V
Id – Continuous Drain Current: 530 mA
Rds On – Drain-Source Resistance: 1.2 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4.5 V
Qg – Gate Charge: 7.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 750 mW
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 11 ns
Product Type: MOSFET
Rise Time: 11 ns
Reel:3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 16 ns
Typical Turn-On Delay Time: 7 ns
Part # Aliases: SI2325DS-T1-E3
Unit Weight: 0.000282 oz
