Description
SI2333CDS-T1-E3 Vishay / Siliconix MOSFET Transistor, P Channel, -7.1A, -12V, 0.0285 ohm, -4.5V, -400mV 12V 5.1A 2.5W 35 mohms @ 4.5V 3-Pin SOT-23 T/R
Specifications
Manufacturer: Vishay
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds – Drain-Source Breakdown Voltage: 12 V
Id – Continuous Drain Current: 7.1 A
Rds On – Drain-Source Resistance: 35 mOhms
Vgs th – Gate-Source Threshold Voltage: 400 mV
Vgs – Gate-Source Voltage: 4.5 V
Qg – Gate Charge: 15 nC
Minimum Operating Temperature: + 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 2.5 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Height: 1.45 mm
Length: 2.9 mm
Series: SI2
Transistor Type: 1 P-Channel
Width: 1.6 mm
Brand: Vishay / Siliconix
Forward Transconductance – Min: 18.5 S
CNHTS: 8541290000
Fall Time: 12 ns
HTS Code: 8541290095
MXHTS: 85412999
Product Type: MOSFET
Rise Time: 35 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
TARIC: 8541290000
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 13 ns
Part # Aliases: SI2333CDS-GE3
Unit Weight: 0.000282 oz
Manufacturer Part Number: SI2333CDS-T1-GE3
Manufacturer: Vishay
