Description
SI3459BDV-T1-GE3 Siliconix Vishay Semiconductors MOSFET, P-Ch, Vds -60V, Vgs +/- 20V, Rds(on) 0.180ohms, Id -2.2A, TSOP-6, Pd 2W RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSOP-6
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 2.9 A
Rds On – Drain-Source Resistance: 216 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 7.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 3.3 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 1.1 mm
Length: 3.05 mm
Series: SI3
Transistor Type: 1 P-Channel
Width: 1.65 mm
Brand: Vishay Semiconductors
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 12 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 5 ns
Part # Aliases: SI3459BDV-T1-BE3 SI3459BDV-GE3
Unit Weight: 0.000705 oz
Manufacturer:Vishay
Datasheet:Vishay/si3459bd.pdf
