Description
SI4497DY-T1-GE3 Vishay Siliconix ^Transistor MOSFET P-Ch 30V 24.8A 8-Pin SOIC T/R RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 36 A
Rds On – Drain-Source Resistance: 2.7 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 285 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 7.8 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 25 ns
Forward Transconductance – Min: 75 S
Product Type: MOSFET
Rise Time: 13 ns
Series: SI4
Reel:2500
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 115 ns
Typical Turn-On Delay Time: 19 ns
Part # Aliases: SI4497DY-GE3
Unit Weight: 0.026455 oz
Manufacturer: Vishay
MFG Part #: SI4497DY-T1-GE3
