Description
SI5517DU-T1-GE3 Vishay / Siliconix Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: ChipFET-8
Transistor Polarity: N-Channel, P-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 6 A
Rds On – Drain-Source Resistance: 39 mOhms, 72 mOhms
Vgs – Gate-Source Voltage: – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 400 mV
Qg – Gate Charge: 16 nC, 14 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 8.3 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay / Siliconix
Configuration: Dual
Fall Time: 10 ns, 55 ns
Forward Transconductance – Min: 22 S, 9 S
Product Type: MOSFET
Rise Time: 65 ns, 35 ns
Series: SI54
Reel:3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time: 40 ns, 40 ns
Typical Turn-On Delay Time: 20 ns, 8 ns
Part # Aliases: SI5517DU-GE3
Unit Weight: 0.002998 oz
