Description
SI7994DP-T1-GE3 Vishay / Siliconix Dual MOSFET, Dual N Channel, 60 A, 30 V, 0.0046 ohm, 10 V, 1V SO-8 Dual
Specifications
Manufacturer: Vishay
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 60 A
Rds On – Drain-Source Resistance: 5.6 mOhms
Vgs th – Gate-Source Threshold Voltage: 1 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 52 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 46 W
Configuration: Dual
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Height: 1.04 mm
Length: 6.15 mm
Series: SI7
Transistor Type: 2 N-Channel
Width: 5.15 mm
Brand: Vishay / Siliconix
Forward Transconductance – Min: 105 S
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 10 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 15 ns
Part # Aliases: SI7994DP-GE3
Unit Weight: 0.017870 oz
Manufacturer Part Number: SI7994DP-T1-GE3
Manufacturer: Vishay Siliconix
