Description
Vishay Siliconix SI9926CDY-T1-GE3 DUAL N CHANNEL MOSFET, 20V, SOIC, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.015ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.5V , RoHS
^Manufacturer: Vishay
^Product Category: MOSFET
^RoHS: RoHS Compliant Details
^Brand: Vishay Semiconductors
^Id – Continuous Drain Current: 8 A
^Vds – Drain-Source Breakdown Voltage: 20 V
^Rds On – Drain-Source Resistance: 18 mOhms
^Transistor Polarity: N-Channel
^Vgs – Gate-Source Breakdown Voltage: 12 V
^Maximum Operating Temperature: + 150 C
^Pd – Power Dissipation: 2 W
^Mounting Style: SMD/SMT
^Package / Case: SOIC-Narrow-8
^Packaging: Reel
^Channel Mode: Enhancement
^Configuration: Dual
^Fall Time: 12 ns, 10 ns
^Minimum Operating Temperature: – 55 C
^Rise Time: 10 ns, 12 ns
^Factory Pack Quantity: 2500
^Typical Turn-Off Delay Time: 35 ns, 25 ns
^Typical Turn-On Delay Time: 15 ns, 10 ns
^Part # Aliases: SI9926CDY-GE3
Manufacturer Part Number: SI9926CDY-T1-GE3
Manufacturer: Vishay
