Description
SIDR170DP-T1-RE3 Vishay / Siliconix MOSFET 100V N-CH 23.2A 8-Pin PowerPAK SO-DC EP T/R RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOIC-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 95 A
Rds On – Drain-Source Resistance: 4.8 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 93 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 10 ns
Reel:3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: SIDR170DP
Unit Weight: 0.026455 oz
Manufacturer: Vishay
MFG Part #: SIDR170DP-T1-RE3
