Description
Siemens SMBTA43 NPN mall Signal Transistor 200V 500mA 360mW SMD / SMT SOT-23
Features, Applications
NPN Silicon Transistor for High Voltages· High breakdown voltage· Low collector-emitter saturation voltage· Complementary types: SMBTA 92 (PNP)
Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, 102 °C Junction temperature Storage temperature
Thermal Resistance Junction ambient 1) Junction – soldering point RthJA RthJS 280 210 K/W
Electrical Characteristics = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage = 1 mA, = 0 Collector-base breakdown voltage = 100 µA, = 0 Emitter-base breakdown voltage = 100 µA, = 0 Collector cutoff current VCB = 0 Collector cutoff current VCB 150 °C Emitter cutoff current VEB 0 DC current gain = 1 mA, VCE = 10 mA, VCE = 30 mA, VCE 10 V Collector-emitter saturation = 20 mA, 2 mA Base-emitter saturation voltage = 20 mA, mA AC Characteristics 50 4 MHz pF VBEsat 0.9 VCEsat hFE V IEBO 100 nA ICBO 20 µA ICBO 100 nA V(BR)EBO 6 V(BR)CBO 300 V(BR)CEO 300 V typ. max.
Total power dissipation Ptot = f (TA*;TS ) Transition frequency = f (IC) VCE f =100MHz
Manufacturer:Infineon Technologies
Datasheet:Others/265795_DS.pdf
