Description
SIHP21N60EF-GE3 Vishay Semiconductor Power Mosfet N-Channel 600V 227W 0.176Ohm 84nC Flange Mount TO-220AB RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 21 A
Rds On – Drain-Source Resistance: 176 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 84 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 227 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 27 ns
Product Type: MOSFET
Rise Time: 31 ns
Series: EF
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 59 ns
Typical Turn-On Delay Time: 21 ns
Part # Aliases: SIHP21N60EF-BE3
Unit Weight: 0.068784 oz
Manufacturer: Vishay
MFG Part #: SIHP21N60EF-GE3
