Description
SIRA10BDP-T1-GE3 Vishay / Siliconix Power MOSFET, N Channel, 30 V, 60 A, 0.0028 ohm, 8-Pin PowerPAK SO-8 RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 60 A
Rds On – Drain-Source Resistance: 2.8 mOhms
Vgs – Gate-Source Voltage: – 16 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.1 V
Qg – Gate Charge: 51 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 40 W
Channel Mode: Enhancement
Tradename: TrenchFET, PowerPAK
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 10 ns
Forward Transconductance – Min: 52 S
Height: 1.04 mm
Length: 6.15 mm
Product Type: MOSFET
Rise Time: 10 ns
Series: SIR
Reel Size:3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 10 ns
Width: 5.15 mm
Part # Aliases: SIRA10DP-GE3
Unit Weight: 0.017870 oz
Manufacturer: Vishay
MFG Part #: SIRA10BDP-T1-GE3
