Description
SMBT1170T Motorola High Speed Transistor NPN 40V 0.6A SMT / SMD SOT-23
High current gain: 0.1 mA to 100 mA ? Low collector-emitter saturation voltage
Parameter Symbol Values Unit Collector-emitter voltage VCE0 25 V Collector-base voltage VCB0 25 Collector current IC 200 mA Total power dissipation, TS = 71 ?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150
Manufacturer Part Number: SMBT1170
Manufacturer: Motorola