Description
SUD50P10-43L-GE3 Vishay Semiconductors MOSFET 100V 37A P-Channel DPA RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 36.4 A
Rds On – Drain-Source Resistance: 43 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 106 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 113.6 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 100 ns
Forward Transconductance – Min: 38 S
Height: 2.38 mm
Length: 6.73 mm
Product Type: MOSFET
Rise Time: 160 ns
Series: SUD
Reel:2000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 42 ns
Width: 6.22 mm
Part # Aliases: SUD50P10-43L-BE3
Unit Weight: 0.011640 oz
Manufacturer: Vishay
MFG Part #: SUD50P10-43L-GE3
