Description
SUM110P08-11L-E3 Vishay / Siliconix MOSFET P-Channel 80V 110A TO-263 RoHS
Specifications
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-263-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 80 V
Id – Continuous Drain Current: 110 A
Rds On – Drain-Source Resistance: 11.2 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 180 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 375 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 4.83 mm
Length: 10.67 mm
Series: SUM
Transistor Type: 1 P-Channel
Width: 9.65 mm
Brand: Vishay / Siliconix
Forward Transconductance – Min: 85 S
Fall Time: 550 ns
Product Type: MOSFET
Rise Time: 330 ns
Factory Pack Quantity: 800
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 135 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 0.139332 oz
Manufacturer: Vishay
MFG Part #: SUM110P08-11L-E3
