Description
TC58NYG0S3HBAI6 Toshiba FLASH – NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 67-VFBGA (6.5×8)
The TC58NYG0 is a single 3.3V 1 Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EPROM) organized as (2048 + 128) bytes 64 pages 1024blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes 64 pages).^
Technical Attributes
Page Size 2 KB
Pin Count 67
Number of Words 128 MWords
Operating Temperature -40 to 85C
Maximum Operating Supply Voltage 1.95V
Number of Bits per Word 8 Bit
Typical Operating Supply Voltage 1.8V
Mounting Surface Mount
Interface Type Serial
Supplier Package VFBGA
Minimum Operating Supply Voltage 1.7V
Block Organization Symmetrical
Programming Voltage 1.7 to 1.95V
Timing Type Synchronous
Screening Level Industrial
Product Dimensions 8 x 6.5 x 0.74(Max)
Sector Size 128 x 1024 KB
Density 1 Gb
Architecture Sectored
Cell Type SLC NAND
ECC Support Yes
Manufacturer:Toshiba
Datasheet:Toshiba/TC58NYG0S3HBAI6.pdf
