Description
TK10A60E,S5X Toshiba Mosfet N-Channel 600V 10A 45W 750mOhm Through Hole TO-220SIS Lead free / RoHS: Compliant
Categories Discrete Semiconductor Products
Transistors – FETs, MOSFETs – Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current – Continuous Drain (Id) 25C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) Id, Vgs 750mOhm 5A, 10V
Vgs(th) (Max) Id 4V 1mA
Gate Charge (Qg) (Max) Vgs 40nC 10V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) Vds 1300pF 25V
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Manufacturer Part Number: TK10A60E,S5X
Manufacturer: Toshiba
