Description
Toshiba TK28A65W,S5X Trans MOSFET N-CH 650V 27.6A 3-Pin TO-220SIS Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current – Continuous Drain (Id) at 25C 27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) at Id, Vgs 110 mOhm at 13.8A, 10V
Vgs(th) (Max) at Id 3.5V at 1.6mA
Gate Charge (Qg) (Max) at Vgs 75nC at 10V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) at Vds 3000pF at 300V
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Manufacturer:Toshiba
Datasheet:Toshiba/TK28A65W.pdf
