Description
ZXMN6A11GTA Diodes Inc N-Channel Enhancement Mode MOSFET 60V 0.12 Ohm SOT-223
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-223-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 4.4 A
Rds On – Drain-Source Resistance: 120 mOhms
Vgs – Gate-Source Voltage: 10 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 5.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 3.9 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 1.65 mm
Length: 6.7 mm
Series: ZXMN6A1
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 3.7 mm
Brand: Diodes Incorporated
Forward Transconductance – Min: 4.9 S
Fall Time: 4.6 ns
Product Type: MOSFET
Rise Time: 3.5 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 8.2 ns
Typical Turn-On Delay Time: 1.95 ns
Unit Weight: 0.003951 oz
Manufacturer Part Number: ZXMN6A11GTA
Manufacturer: Electronic Components
