ZXTP2006E6TA Diodes Incorporated Transistor PNP 20 V 3.5 A SOT-23-6

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ZXTP2006E6TA Diodes, Inc Transistor GP BJT PNP 20V 3.5A 6-Pin SOT-23 T/R

Description

Diodes Incorporated ZXTP2006E6TA ZXTP2006E6 Series PNP 20 V 3.5 A Medium Power Transistor SMT – SOT-23-6
Product Category: Bipolar Transistors – BJT
RoHS:
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-6
Transistor Polarity: PNP
Configuration: Single
Maximum DC Collector Current: 3.5 A
Collector- Emitter Voltage VCEO Max: 20 V
Collector- Base Voltage VCBO: 25 V
Emitter- Base Voltage VEBO: 7.5 V
Collector-Emitter Saturation Voltage: 110 mV
Pd – Power Dissipation: 1.7 W
Gain Bandwidth Product fT: 110 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: ZXTP200
Packaging: Reel
Packaging: Cut Tape
Brand: Diodes Incorporated
DC Collector/Base Gain hfe Min: 300
DC Current Gain hFE Max: 900
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors
Unit Weight: 0.000229 oz
Manufacturer Part Number: ZXTP2006E6TA
Manufacturer:Diodes Inc.