Transphorm stands at the forefront of the GaN Revolution as a global semiconductor powerhouse, pioneering the development of GaN devices renowned for their unparalleled performance and reliability in high voltage power conversion applications. At the heart of this success lies Transphorm’s vertically-integrated business model, which harnesses the expertise of the industry’s most seasoned GaN engineering team across all stages of development: from design and fabrication to device and application support. This approach, bolstered by a vast IP portfolio boasting over 1000 patents, has yielded the industry’s sole JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s groundbreaking innovations are transcending the limitations of silicon, achieving remarkable efficiency exceeding 99%, 40% greater power density, and a 20% reduction in system cost. With headquarters in Goleta, California, and manufacturing operations in Goleta and Aizu, Japan, Transphorm continues to lead the charge in advancing power electronics worldwide.
On January 11, 2024, at 3:00 p.m. JST in Tokyo and January 10, 2024, at 10:00 p.m. PST in Goleta, California, Renesas Electronics Corporation (“Renesas,” TSE: 6723), a premier supplier of advanced semiconductor solutions, and Transphorm, Inc. (“Transphorm,” Nasdaq: TGAN), a global leader in robust gallium nitride (“GaN”) power semiconductors, announced a definitive agreement. Under this agreement, a Renesas subsidiary will acquire all outstanding shares of Transphorm’s common stock. This acquisition grants Renesas access to in-house GaN technology, a pivotal next-generation material for power semiconductors, expanding its presence in burgeoning markets such as electric vehicles, computing (including data centers and AI infrastructure), renewable energy, industrial power conversion, and fast chargers/adapters.
