Description
International Rectifier Corp. – IR IRF7319 Leaded 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Specifications
Parameter Value
VBRDSS (V) 30
RDS(on) 10V P-Ch (mOhms) 58.0
RDS(on) 10V N-Ch (mOhms) 29.0
Base Part Status Obsolete
Circuit 1N-1P
ID @ TA = 25C N-Ch (A) 6.5
ID @ TA = 25C P-Ch (A) -4.9
MSL 1
Package SO-8
Power Dissipation @ TA = 25C (W) 2
Qg Typ N-Ch (nC) 22.0
Qg Typ P-Ch (nC) 23.0
Qgd Typ N-Ch (nC) 6.4
Qgd Typ P-Ch (nC) 5.9
Qual Level Consumer
Rth(JA) (C/W) 62.5
VGs Max (V) 20
ID @ TA = 70C P-Ch (A) -3.9
RoHS No
ID @ TA = 70C N-Ch (A) 5.2
Halogen-Free No
RDS(on) 4.5V P-Ch (mOhms) 98.0
RDS(on) 4.5V N-Ch (mOhms) 46.0
Technology Planar Mosfet
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Manufacturer:International Rectifier
Datasheet:irf7319.pdf
