Description
Infineon IPA60R125CP COOLMOS POWER TRANSISTOR 650V PG-TO220-3-31, RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 25 A
Rds On – Drain-Source Resistance: 110 mOhms
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 70 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 35 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Height: 16.15 mm
Length: 10.65 mm
Series: CoolMOS CE
Transistor Type: 1 N-Channel
Width: 4.85 mm
Brand: Infineon Technologies
Fall Time: 5 ns
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 15 ns
Part # Aliases: IPA60R125CPXKSA1 IPA6R125CPXK SP000095275
Unit Weight: 0.211644 oz
CoolMOS™ CP, Infineon’s fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
Summary of Features:
Lowest figure of merit R on x Q g
Ultra low gate charge
Extreme dv/dt rate
Ultra low R DS(on), ultra low gate charge, very fast switching
V th 3 V, g fs very high, internal R g very low
High current capability
Significant reduction of conduction and switching losses
High power density and efficiency for superior power conversion systems
Best-in-class price/performance ratio
Manufacturer Part Number: IPA60R125CP
Manufacturer: Infineon Technologies
