Description
IPD050N03L G Infineon Technologies Transistor MOSFET N-CH, 30V, 50A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0042ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power , RoHS
Specifications
Product Category: MOSFET
Manufacturer: Infineon
RoHS: RoHS Compliant
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 4.2 mOhms
Vgs th – Gate-Source Threshold Voltage: 1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 31 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Reel
Brand: Infineon Technologies
Fall Time: 3.8 ns
Forward Transconductance – Min: 38 S
Height: 2.3 mm
Length: 6.5 mm
Pd – Power Dissipation: 68 W
Rise Time: 13 ns
Series: OptiMOS 3
Factory Pack Quantity: 2500
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 6.7 ns
Width: 6.22 mm
Part # Aliases: G IPD050N03L IPD050N03LGXT SP000680630
Unit Weight: 0.139332 oz
Manufacturer Part Number: IPD050N03L-G
Manufacturer: Infineon Technologies
