Description
IPD200N15N3GATMA1 Infineon Transistor MOSFET N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO252-3
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 150 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 20 mOhms
Vgs th – Gate-Source Threshold Voltage: 2 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 23 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 29 S
CNHTS: 8541290000
Fall Time: 6 ns
HTS Code: 8541290095
MXHTS: 85412999
Product Type: MOSFET
Rise Time: 11 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
TARIC: 8541290000
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 14 ns
Part # Aliases: G IPD200N15N3 SP001127820
Unit Weight: 0.139332 oz
Manufacturer Part Number: IPD200N15N3GATMA1
Manufacturer: Infineon Technologies
