Description
2N7002 LGE Mosfet (N-Channel) 60V 115MA SOT-323 ROHS
The 2N7002 is a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current – Continuous Drain (Id) @ 25°C
115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Manufacturer Part Number: 2N7002…
