Description
Alpha & Omega Semiconductor AO3407A Transistor MOSFET P-CH 30V 4.3A SOT23
Type Designator: AO3407A
Type of AO3407A transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 1.4
Maximum drain-source voltage |Uds|, V: 30
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 4.3
Maximum junction temperature (Tj), °C: 150
Rise Time of AO3407A transistor (tr), nS: 5.5
Drain-source Capacitance (Cd), pF: 100
Maximum drain-source on-state resistance (Rds), Ohm: 0.048
Package: SOT23-3
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current – Continuous Drain (Id) @ 25°C 4.3A (Ta)
Rds On (Max) @ Id, Vgs 48 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) @ Vds 830pF @ 15V
Power – Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3L
This AO3407A power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1400 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Manufacturer:Electronic Components
Datasheet:ao3407a.pdf
