Description
BFX85 CDIL Transistor General Purpose BJT NPN 60V 1A 800mW 3-Pin TO-39
Category
Bipolar Power
Material
Si
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Base Voltage (V)
100
Maximum Collector-Emitter Voltage (V)
60
Maximum Base-Emitter Saturation Voltage (V)
1.2@1mA@10mA|1.3@15mA@150mA|1.5@50mA@500mA|2@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)
0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A
Maximum DC Collector Current (A)
1
Maximum Collector Cut-Off Current (nA)
500
Minimum DC Current Gain
50@10mA@10V|70@150mA@10V|30@500mA@10V|15@1A@10V
Maximum Power Dissipation (mW)
800
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
175
Diameter
9.4(Max)
Mounting
Through Hole
Package Height
6.6(Max)
PCB changed
3
Standard Package Name
TO
Supplier Package
TO-39
Pin Count
3
Lead Shape
Through Hole
Manufacturer
CDIL
Type of transistor
NPN
Polarisation
bipolar
Collector-emitter voltage
60V
Collector current
1A
Power dissipation
0.8W
Case
TO39
Current gain
15…70
Mounting
THT
Kind of package
bulk
Frequency
50MHz
