Description
BSC009NE2LSATMA1 Infineon N-Channel 25 V 0.9 mOhm OptiMOS Power-MOSFET – PG-TDSON-8
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 25 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 1 mOhms
Vgs th – Gate-Source Threshold Voltage: 1 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 168 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 96 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 1.27 mm
Length: 5.9 mm
Transistor Type: 1 N-Channel
Width: 5.15 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 85 S
Fall Time: 19 ns
Product Type: MOSFET
Rise Time: 33 ns
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: BSC009NE2LS BSC9NE2LSXT SP000893362
Unit Weight: 0.004194 oz
Manufacturer:Infineon Technologies
Datasheet:Infineon/BSC009NE2LS-DS-v02_03-en.pdf
