Description
BSC100N06LS3 G Infineon Technologies Transistor: N-MOSFET, unipolar, 60V, 41A, 50W, PG-TDSON-8
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 7.8 mOhms
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 45 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 1.27 mm
Length: 5.9 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 5.15 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 32 S
Fall Time: 8 ns
Pd – Power Dissipation: 50 W
Rise Time: 58 ns
Factory Pack Quantity: 5000
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 8 ns
Part # Aliases: BSC100N06LS3GATMA1 BSC1N6LS3GXT SP000453664
Unit Weight: 0.003527 oz
Manufacturer Part Number: BSC100N06LS3-G
Infineon Technologies
