BSS123LT1G ON Semiconductor MOSFET N-Channel 170MA 100V SOT23

BSS123LT1 ON Semiconductor Power MOSFET Transistor, N Channel, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V SOT23

SKU: BSS123LT1G Categories: , , Tag: Brand:

Description

BSS123LT1G – ON Semiconductor Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: RoHS Compliant Details
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 170 mA
Rds On – Drain-Source Resistance: 6 Ohms
Vgs – Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Technology: Si
Packaging: Reel
Channel Mode: Enhancement
Brand: ON Semiconductor
Configuration: Single
Forward Transconductance – Min: 0.08 S
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 225 mW
Series: BSS123L
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 0.050717 oz

The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA.
  • AEC-Q101 Qualified
  • PPAP capable

Applications

Automotive

Manufacturer:ON Semiconductor
Datasheet:BSS123LT1-D.PDF

Additional information

Weight 0.001 lbs
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