Description
BSS123NH6327XTSA1 Infineon Technologies Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS Small Signal Mosfet – SOT-23
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 190 mA
Rds On – Drain-Source Resistance: 2.4 Ohms
Vgs th – Gate-Source Threshold Voltage: 800 mV
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 900 pC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Qualification: AEC-Q100
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 1.1 mm
Length: 2.9 mm
Series: BSS123
Transistor Type: 1 N-Channel
Width: 1.3 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 410 mS
Fall Time: 22 ns
Pd – Power Dissipation: 500 mW (1/2 W)
Rise Time: 3.2 ns
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 7.4 ns
Typical Turn-On Delay Time: 2.3 ns
Part # Aliases: BSS123N BSS123NH6327XT H6327 SP000870646
Unit Weight: 0.000282 oz
Manufacturer Part Number: BSS123NH6327XTSA1
Infineon Technologies
