Description
BSS670S2LH6327XTSA1 Infineon Single N-Channel 55 V 650 mOhm 1.7 nC OptiMOS Enhancement Mode Mosfet – Automotive 3-Pin SOT-23
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 55 V
Id – Continuous Drain Current: 540 mA
Rds On – Drain-Source Resistance: 346 mOhms
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 2.26 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 360 mW
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Height: 1.1 mm
Length: 2.9 mm
Series: BSS670S2
Transistor Type: 1 N-Channel
Width: 1.3 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 600 mS
Fall Time: 24 ns
Product Type: MOSFET
Rise Time: 25 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 21 ns
Typical Turn-On Delay Time: 9 ns
Part # Aliases: BSS670S2L BSS670S2LH6327XTSA1 H6327 SP000928950
Unit Weight: 0.000282 oz
Manufacturer Part Number: BSS670S2LH6327XTSA1
Infineon Technologies
