Description
HAT1043M-EL-E Renesas Electronics Power Field-Effect Transistor, 4.4A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Category: Transistors
Mfr Package Description MODIFIED SC-95, TSOP-6
EU RoHS Compliant Yes
Status Transferred
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 4.4 A
Drain Current-Max (ID) 4.4 A
Drain-source On Resistance-Max 0.11 ohm
DS Breakdown Voltage-Min 20.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Manufacturer:Renesas
Datasheet:rej03g1151_hat1043mds.pdf
