Description
IPP110N20N3GXKSA1 Infineon Technologies OptiMOSTM 3 Power-Transistor N-CH 200V 88A 3-Pin(3+Tab) TO-220
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 88 A
Rds On – Drain-Source Resistance: 9.9 mOhms
Vgs th – Gate-Source Threshold Voltage: 2 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 87 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd – Power Dissipation: 300 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Tube
Height: 15.65 mm
Length: 10 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 71 S
Fall Time: 11 ns
Product Type: MOSFET
Rise Time: 26 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 41 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: IPP110N20N3GXKSA1 IPP11N2N3GXK SP000677892
Unit Weight: 0.211644 oz
Manufacturer Part Number: IPP110N20N3GXKSA1
Manufacturer: Infineon Technologies
