Description
IRF7240TRPBF Single P-Channel 40 V 2.5 W 73 nC Hexfet Power Mosfet Surface Mount – SOIC-8
P-Channel Power MOSFET 40V to 55V, Infineon IR
Infineon’s range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Channel Type P
Maximum Continuous Drain Current 10.5 A
Maximum Drain Source Voltage 40 V
Maximum Drain Source Resistance 25 m?
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 2.5 W
Typical Turn-Off Delay Time 210 ns
Maximum Operating Temperature +150 °C
Series HEXFET
Height 1.5mm
Typical Input Capacitance @ Vds 9250 pF @ -25 V
Typical Gate Charge @ Vgs 73 nC @ 10 V
Minimum Operating Temperature -55 °C
Typical Turn-On Delay Time 52 ns
Transistor Material Si
Dimensions 5 x 4 x 1.5mm
Length 5mm
Number of Elements per Chip 1
Width 4mm
Manufacturer Part Number: IRF7240TRPBF
Manufacturer: Infineon Technologies
